Defect analysis method formed on semiconductor wafer

专利摘要:
The present invention relates to a defect analysis method formed on a semiconductor wafer capable of analyzing the number and shape of defects formed on the wafer. According to the present invention, the number of particles and crystal defects present on a wafer is counted using a particle counter, coordinates the counted positions of the particles and crystal defects, and the wafer is referenced based on the coordinates. Scanning using an atomic force microscope. Therefore, there is an effect that can easily analyze the shape of the real particles and crystal defects present on the wafer using a particle counter and an atomic force microscope.
公开号:KR19980055058A
申请号:KR1019960074264
申请日:1996-12-27
公开日:1998-09-25
发明作者:이곤섭；박재근；홍종혁；최수열
申请人:김광호；삼성전자 주식회사；
IPC主号:

专利说明:

Defect analysis method formed on semiconductor wafer
The present invention relates to a defect analysis method formed on a semiconductor wafer, and more particularly, to a defect analysis method formed on a semiconductor wafer capable of analyzing the number and shape of defects formed on a wafer.
In general, a semiconductor device manufacturing process is performed by precise work control in a highly clean working environment, but semiconductor devices produced by various causes contain many kinds of particles.
Therefore, a particle counter capable of counting the number of particles, that is, particles are condensed around a nucleus, and the number of particles is detected by detecting a scattered laser by scanning a laser on the condensed nucleus. By using a condensation nucleus counter that counts the number of particles present on the wafer in which the specific semiconductor device manufacturing process is performed. As a result, a run in which a wafer with particles having a threshold value or more is present is taken to prevent another defective wafer from being repeatedly produced.
However, the conventional condensation nucleus counter detects the number of COPs, which are actual particles and crystal defects, by detecting both particles having a size of 0.2 μm or more and COP, which is a crystal defect having a size of 0.2 μm or less. There was a problem that could not be.
In addition, the conventional condensation nucleus counter simply checks the number of particles above or below a certain size, there is a problem that can not grasp the shape of the COP defect present in the empty space on the wafer.
An object of the present invention is to provide a defect analysis method formed on a semiconductor wafer capable of counting the number of COPs that are crystal defects.
Another object of the present invention is to provide a defect analysis method formed on a semiconductor wafer capable of analyzing the shape of the COP defect present on the wafer by using an atomic force microscope and a particle counter.
1 is a view for explaining an embodiment of a defect analysis method formed on a semiconductor wafer according to the present invention.
Defect analysis method formed on a semiconductor wafer according to the present invention for achieving the above object, counting the number of particles and crystal defects present on the wafer using a particle counter, the counted particles and crystals Coordinate the position of the defect and scanning the wafer using an atomic force microscope based on the coordinates.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a view for explaining an embodiment of a defect analysis method formed on a semiconductor wafer according to the present invention.
Referring to Fig. 1, first, a particle counter is scanned with a laser on a wafer to coordinate particles and COPs present on the wafer in μm units as shown in Fig. 1.
Subsequently, as the tip moves up and down and to the left and right on the wafer, quantum mechanical tunneling occurs between the wafer and the tip, and the coordinates are placed on an atomic force microscope scanning a pattern formed on the wafer. Introduce to scan particles and COP. Thus, it is possible to grasp the shape of the real particles and COP.
Analysis results for the wafer through the existing production line by the defect analysis method formed on the semiconductor wafer according to the present invention as described above are shown in Table 1 as a percentage of the COP and P / C.
Therefore, according to the present invention, the particle counter and the atomic force microscope can be used to easily analyze the shape and relative abundance of real particles and crystal defects present on the wafer.
Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

权利要求:
Claims (1)
[1" claim-type="Currently amended] Counting the number of particles and crystal defects present on the wafer using a particle counter;
Coordinate the position of the counted particle and crystal defect;
Defect analysis method formed on a semiconductor wafer comprising the step of scanning the wafer using an atomic microscope based on the coordinates.

类似技术:

---

公开号 | 公开日 | 专利标题

---

US9581526B2|2017-02-28|Method for S/TEM sample analysis

---

JP5065468B2|2012-10-31|System and method for automatically analyzing defective materials on semiconductors

---

JP5711204B2|2015-04-30|Methods and apparatus for sample extraction and handling

---

KR20150043448A|2015-04-22|Automated inspection scenario generation

---

JP5090255B2|2012-12-05|STEM sample preparation method in situ

---

US5539752A|1996-07-23|Method and system for automated analysis of semiconductor defect data

---

US6858089B2|2005-02-22|Apparatus and method for semiconductor wafer cleaning

---

US6175646B1|2001-01-16|Apparatus for detecting defective integrated circuit dies in wafer form

---

US6605478B2|2003-08-12|Kill index analysis for automatic defect classification in semiconductor wafers

---

US6779159B2|2004-08-17|Defect inspection method and defect inspection apparatus

---

EP1093574B1|2006-02-01|Automatic defect classification with invariant core classes

---

KR100653500B1|2006-12-04|Regions of interest-Based Defect Detection

---

JP3522280B2|2004-04-26|Method and apparatus for a ball bond inspection system

---

US10539589B2|2020-01-21|Through process flow intra-chip and inter-chip electrical analysis and process control using in-line nanoprobing

---

US6521466B1|2003-02-18|Apparatus and method for semiconductor wafer test yield enhancement

---

US7457453B2|2008-11-25|Pattern inspection method and apparatus

---

JP4699873B2|2011-06-15|Defect data processing and review equipment

---

JP4459289B2|2010-04-28|Inspection system and apparatus

---

US7855363B2|2010-12-21|Inspection method and apparatus using an electron beam

---

US7071468B2|2006-07-04|Circuit pattern inspection method and its apparatus

---

US6246787B1|2001-06-12|System and method for knowledgebase generation and management

---

JP5127148B2|2013-01-23|Ion beam processing equipment

---

US7016031B2|2006-03-21|System and methods for classifying anomalies of sample surfaces

---

US5673208A|1997-09-30|Focus spot detection method and system

---

US6850320B2|2005-02-01|Method for inspecting defects and an apparatus for the same

同族专利:

---

公开号 | 公开日

---

引用文献:

---

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

---

法律状态:
1996-12-27|Application filed by 김광호, 삼성전자 주식회사

---

1996-12-27|Priority to KR1019960074264A

---

1998-09-25|Publication of KR19980055058A

优先权:

---

申请号 | 申请日 | 专利标题

---

KR1019960074264A|KR19980055058A|1996-12-27|1996-12-27|Defect analysis method formed on semiconductor wafer|